Author:
Mukhopadhyaya Keka,Srividya P
Abstract
Abstract
p-type Thin Film Transistor (TFT) exhibits performance characteristics which is inferior to its n-type counterpart, which in turn limited its scope of wide application mainly in the domain of transparent and flexible electronics. This paper thoroughly reviews the basic operation of TFT, different parameters used to evaluate performance. A comparison of performance analysis of different oxide based p-type TFT viz. copper oxide, tin oxide and nickel oxide are done against different relevant parameters.
Reference43 articles.
1. Recent Developments In P-Type Oxide Semiconductor Materials And Devices;Wang;Adv. Mater.,2016
2. Metal Oxide Semiconductor Thin-Film Transistors For Flexible Electronics;Petti;Appl. Phys. Rev,2016
3. Comprehensive Review On The Development Of High Mobility In Oxide Thin Film Transistors;Choi;J. Korean Phys. Soc.,2017
4. Modeling the Variability Caused by Random Grain Boundary and Trap-location Induced Asymmetrical Read Behavior for a Tight-pitch Vertical Gate 3D NAND Flash Memory Using Double-Gate Thin-Film Transistor (TFT) Device;Hsiao,2012
5. Flexible Double Gate A-IGZO TFT Fabricated On Free Standing Polyimide Foil;Münzenrieder;Solid-State Electron.,2013
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献