Effect of variation in channel length and thickness of organic semiconductor in the bottom-gate configuration of OTFT

Abstract

Abstract Advancing in the device and circuit performance a vast amount of study is going in the area of organic electronics. In the present work, we have patterned the features of the bottom-gate configuration of OTFT with the help of Technology Computer-Aided Design (TCAD) tools where ATLASTM (Silvaco International) has been utilized as a 2D numerical device simulator to extract the electrical characteristics. To monitor the effect of variation in channel length and thickness of OTFT, we have altered the channel length (L) from 10um to 50um, which results in the reduction of the drive current from -1.4 × 10-10 A to -2.7 × 10-11 A (BGBC), and in contrary to that the performance of the device has been affected as the current ratio decrease from 1.2 × 1012 to 1.4 × 103 (BGBC) with a thickness variation of organic semiconductor from 10nm to 50nm. Furthermore, the electrical characteristics as well as performance parameters like mobility, on/off current ratio, threshold voltage, etc., related to configured Bottom-Gate (top and bottom contacts) pentacene-based OTFT devices have been retrieved and compared.