Technology for the formation of refractory metals for micro- and nanoelectronics products

Abstract

Abstract Metal silicides play a significant role in the preparation of ohmic contacts and Schottky barriers on silicon. The formation of ohmic contacts is carried out by applying a metal film with a thickness of ∼ 100 nm to silicon, followed by annealing at temperatures of 400–600 °C, as a result of which there is a reaction between silicon and metal with the formation of silicide. With this technology, silicon diffusion leads to instability of devices. In this regard, the authors developed an improved technology for the formation of silicides of refractory metals to obtain ohmic contacts. Ion implantation allows, due to ionic mixing, forming nickel silicide on the surface of the samples when heated. It is important that, with an increase in the radiation dose, the formation of Ni2Si silicide slows down. This effect can be explained by the formation of a dielectric Ni3Si2. Similar phenomena were observed during the bombardment by oxygen and nitrogen ions.