Author:
Kunitoku Y,Akiyama Y,Manabe Y,Sato F
Abstract
Abstract
The purpose of this study is to investigate the change in dielectric performance in the direction of parallel to layers due to the difference in γ-ray irradiation temperature, irradiation atmosphere, and absorbed dose. γ-ray was irradiated using a 60Co source at room temperature, in liquid nitrogen, and in liquid nitrogen temperature gas atmosphere in the absorbed doses of 0, 5, and 10 MGy, respectively, and the dielectric breakdown tests were conducted at room temperature using a high-voltage breakdown tester. To investigate the mechanism of the change in dielectric strength, the density and electron spin resonance (ESR) measurements of the specimens were carried out. After irradiation at room temperature, the dielectric strength increased slightly with the increase in the absorbed dose. The reason for this may be that the molecular density increased due to the promotion of cross-linking reaction by recombination of molecules and reaction of unreacted epoxy groups by γ-ray irradiation. After irradiation in liquid nitrogen, the dielectric strength decreased significantly at 10 MGy, while after irradiation in liquid nitrogen temperature gas atmosphere, the dielectric strength slightly decreased with the increase in absorbed dose. These results suggest that, at low temperature, the freezing of molecular motion limits the movement of radicals generated by irradiation, and that the decomposition reaction is dominant against the crosslinking reaction.