Full potential study of electronic and thermoelectric properties of GdNiSb compound

Abstract

Abstract In the present work we have investigated electronic and thermoelectric properties of GdNiSb compound. The calculations have been performed using local spin density approximation (LSDA) with Hubbard parameter (U) included for exchange correlation effect. The calculated results of a cubic half-Heusler phase of GdNiSb compound shows semiconducting behaviour due to a narrow band gap (0.279 eV) is opened. Thermoelectric properties such as electrical conductivity (σ/τ), Seebeck coefficient (S) and figure of merit (ZT) was calculated. Values of thermoelectric parameters show that GdNiSb compound could be used as potential material for thermoelectric applications.