Effect of Oxide Thickness Variation in Sub-micron NMOS Transistor
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/226/i=1/a=012145/pdf
Reference18 articles.
1. Device optimization on gate oxide and spacer dielectric permittivity for “well-tempered” nanoscale MOSFET
2. Variable gate oxide thickness MOSFET: A device level solution for sub-threshold leakage current reduction
3. Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides
4. Double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET: A proposal and analysis
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