Effect of physical parameters on the drain characteristics of Double gate MOSFET incorporating Quantum Mechanical Effects

Abstract

Abstract Scaling of bulk MOSFETs in nanometre regime has several disadvantages. The electrical behaviour of the devices doesn’t show the anticipated characteristics if scaling is done beyond certain point. But in order to have smaller devices with higher density on chips, it is necessary to avoid short channel effects (SCE) which lead to unexpected electrical features. One of the methods to avoid SCE is to have multi-gate architecture of MOSFET. This paper investigates the behaviour of double-gate MOSFETs with respect to the variation of their physical dimensions. The analyses have been done taking into notice the quantum mechanical effects due to dimensions in nanometre scale. The results obtained highlight how subthreshold and above threshold regions are impacted due to the various physical quantities that have been varied.