ABC recombination model for quantum dot laser

Abstract

Abstract In this paper, we applied the ABC model in quantum dot (QD) semiconductor laser for the first time. We used a 1000μm cavity length InAsP/GaAs quantum dot laser emitting at 761nm, which was improved at Cardiff University. The ABC model is used to estimate the carrier losses that are caused by spontaneous emission and Auger recombination in semiconductor materials. It is shown that the ABC model is applicable in such lasers. The results show that the Shockley-Read-Hall (A) is 2.03 ×l09 sec−1. The radiative coefficient (B) is 2.28 ×l0−14 cm−3 .sec−1 and the Auger recombination (C) is around 8 ×l0−37 cm−6 .sec−1. The results are very close to the actual findings as measured by several different methods. Moreover, the measurement method is feasible, which can pave the path for the use of this procedure to determine the losses mechanism in semiconductor lasers.