Determination of the impurity concentrations in a semiconductor from Hall coefficient measurements
Author:
Publisher
IOP Publishing
Subject
General Engineering
Link
https://iopscience.iop.org/article/10.1088/0508-3443/8/8/307/pdf
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2. Characterization of Boron-Doped Diamond Epitaxial Films;Japanese Journal of Applied Physics;1991-07-15
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4. The nature of the acceptor centre in semiconducting diamond;Journal of Physics C: Solid State Physics;1971-09-17
5. Impact Ionization of Impurities in Germanium at Low Temperatures;Electrical and Optical Properties of Semiconductors;1968
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