Intense sub-terahertz radiation from wide-bandgap semiconductor based large-aperture photoconductive antennas pumped by UV lasers

Abstract

Abstract The characteristics of terahertz (THz) radiation generated from large-aperture photoconductive antennas (LAPCAs) were investigated. The antennas were fabricated using different wide-bandgap semiconductor crystals (ZnSe, GaN, 6H–SiC, 4H–SiC and β–Ga2O3) as the substrate. We used an amplified sub-picosecond KrF excimer laser for illumination of the LAPCAs. THz emission scaling was studied as a function of the bias field and the pump laser energy. It was found that the radiated THz energy scales quadratically as a function of the bias field and sub-linearly as a function of the optical fluence for most of the substrates. Further, we demonstrate that SiC, and especially 4H–SiC LAPCAs offer the best THz generation performances. In order to generate intense THz radiation, we fabricated both 6H- and 4H–SiC LAPCAs with an interdigitated structure. From the field autocorrelation trace, it was found that the spectra lie in the sub-THz regime, extending up to 400 GHz, with a peak frequency at 50 GHz, making the bridge between the microwaves band and the THz band. The maximum generated THz energy was 11 μJ, which is to date the highest THz energy measured from LAPCA sources, with a corresponding peak electric field of 115 kV cm−1 and a corresponding ponderomotive potential of 60 eV. Nonlinear THz experiments were performed using these energetic THz pulses, and open aperture Z-scan experiments in an n-doped InGaAs layer revealed a transmission enhancement of 1.7. It was also shown that in order to have efficient THz generation, the energy contrast of the laser must be kept high.