Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments-Reference-Cited by-同舟云学术

Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments

Published:2007-05-17 Issue:5 Volume:9 Page:128-128
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Rauter P,Fromherz T,Vinh N Q,Murdin B N,Phillips J P,Pidgeon C R,Diehl L,Dehlinger G,Grützmacher D,Zhao Ming,Ni Wei-Xin,Bauer G

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference16 articles.

1. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

2. Demonstration of a silicon Raman laser

3. Far-infrared stimulated emission from optically excited bismuth donors in silicon

4. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

5. Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures

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