A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000 \bar{1} ) clean surfaces: significance of the surface Stark effect-Reference-Cited by-同舟云学术

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A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000 \bar{1} ) clean surfaces: significance of the surface Stark effect

Published:2010-04-13 Issue:4 Volume:12 Page:043024
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Sołtys Jakub,Piechota Jacek,Łopuszyński Michał,Krukowski Stanisław

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference40 articles.

1. Polytypic transformations in SiC: Anab initiostudy

2. Silicon carbide and silicon carbide-based structures

3. Heterocrystalline Structures: New Types of Superlattices?

4. Mechanical properties of 3C silicon carbide

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