Spin-valley system in a gated MoS2-monolayer quantum dot

Abstract

Abstract The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS2 monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement potential and force intervalley transitions. The present Rashba spin–orbit coupling additionally allows for spin operations. Moreover, both effects enable the spin-valley SWAP. The device structure is modeled realistically, taking into account feasible dot-forming potential and electric field that controls the Rasha coupling. Therefore, by performing reliable numerical simulations, we show how by electrically controlling the state of the electron in the device, we can obtain single- and two-qubit gates in a spin-valley two-qubit system. Through simulations we investigate possibility of implementation of two qubits locally, based on single electron, with an intriguing feature that two-qubit gates are easier to realize than single ones.