Highly spin-polarized materials and devices for spintronics∗-Reference-Cited by-同舟云学术

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Highly spin-polarized materials and devices for spintronics∗

Published:2008-01 Issue:1 Volume:9 Page:014101
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Inomata Koichiro¹,Ikeda Naomichi²,Tezuka Nobuki²,Goto Ryogo²,Sugimoto Satoshi²,Wojcik Marek³,Jedryka Eva³

Affiliation:

1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan

2. Department of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, Japan

3. Institute of Physics, Polish Academy of Sciences, Warszawa 02-668, Poland

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1088/1468-6996/9/1/014101

Reference42 articles.

1. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

2. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

3. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

4. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

5. New Class of Materials: Half-Metallic Ferromagnets

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4. Data-driven design of high-curie temperature full-heusler alloys for spintronic applications;Materials Today Physics;2024-09

5. First‐Principles Study on the Spin Polarization of Single‐Walled Arsenic Nitride Nanotubes Decorated with C, O, Ge, and Se;physica status solidi (b);2024-07-27

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