Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures-Reference-Cited by-同舟云学术

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Published:2012-10 Issue:5 Volume:13 Page:055002
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Shah Vishal Ajit,Myronov Maksym,Wongwanitwatana Chalermwat,Bawden Lewis,Prest Martin J,Richardson-Bullock James S,Rhead Stephen,Parker Evan H C,Whall Terrance E,Leadley David R

Publisher

Informa UK Limited

Subject

General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1088/1468-6996/13/5/055002

Reference43 articles.

1. Technologies for Cofabricating MEMS and Electronics

2. Design, fabrication and vacuum operation characteristics of two-dimensional comb-drive micro-scanner

3. A CMOS-compatible bulk technology for the fabrication of magnetically actuated microbalances for chemical sensing

4. High-$Q$ Solenoid Inductors With a CMOS-Compatible Concave-Suspending MEMS Process

5. Bolometers for far-infrared and submillimetre astronomy

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