Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aa9a8b/pdf
Reference74 articles.
1. Structural and luminescent properties of ZnTe film grown on silicon by metalorganic chemical vapor deposition
2. Observation of ultra-broadband terahertz emission from ZnTe films grown by metaloganic vapor epitaxy
3. Broadband detection capability of ZnTe electro‐optic field detectors
4. Freeze-out of difference-phonon modes in ZnTe and its application in detection of THz pulses
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