Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al2O3
Author:
Funder
Russian Science Foundation
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab6105/pdf
Reference32 articles.
1. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
2. Surface Passivation of Mercury-Cadmium-Telluride Infrared Detectors
3. Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures
4. Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy,Hg1−xCdxTe
5. The bonding properties of mercury–cadmium telluride
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1. Characterization of Intentional Contaminations at the HgCdTe Passivation Interface and Their Effects on Photodiode Performance;Journal of Electronic Materials;2024-06-06
2. Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors;Russian Physics Journal;2021-09
3. Electrical properties of plasma-free ultra-low-temperature ALD ZnS passivation on p-type HgCdTe;Infrared Physics & Technology;2021-05
4. Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques;Journal of Electronic Materials;2021-02-02
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