Abstract
Abstract
The α-In2Se3 material is a two-dimensional ferroelectric semiconductor whose structural asymmetry gives it spontaneous polarization properties, and exhibits a direct bandgap structure when it is multilayered. α-In2Se3 is an n-type semiconductor, which is usually used in experiments to form heterojunctions with p-type semiconductors to prepare photodetectors. In this paper, we designed α-In2Se3/Nb-doped MoS2 heterojunction, because Nb doping is a good p-type dopant for MoS2. Our research shows that: the heterojunction exhibits type-Ⅱ band alignment; the band offset can be changed by the out-of-plane polarization direction; doping can modulate the Fermi energy level position of MoS2 and thus further modulate the band alignment and band offset. The α-In2Se3/Nb-doped MoS2 heterojunction is expected to be applied to the field of photodetectors, and we proposed a method to adjust the band alignment of the heterojunction by adjusting the doping concentrations.
Funder
Gansu Province Natural Science Foundation
National Natural Science Foundation of China
Gansu Provincial Scientific and Technologic Planning Program
Funds for the Central Universities
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials