Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view-Reference-Cited by-同舟云学术

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Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

Published:2019-05-01 Issue:6 Volume:34 Page:065003
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Agopian P G D^ORCID,Torres H L F,Martino J A,Rooyackers R,Simoen E^ORCID,Claeys C,Collaert N

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab118f/pdf

Reference19 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches

2. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

3. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs

4. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical modeling approach to drain current characterization of ionization irradiated dual material trigate TFET;Micro and Nanostructures;2022-06

2. Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose;IEEE Transactions on Nuclear Science;2021-05

3. Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction;Applied Physics A;2020-05-22

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