In2O3 decorated TiO2 for broadband photosensing applications

Abstract

Abstract This paper presents the fabrication and broadband photosensing of bare TiO2 and In2O3 decorated TiO2 based photodetectors. The photosensing properties of the In2O3 decorated TiO2 were compared with the bare TiO2. The proposed photosensing devices are wafer scalable. The devices were tested in the broad spectral range from ultraviolet to near-infrared wavelengths. The In2O3 decorated TiO2 heterojunction-based photodetector showed improved photocurrent with a high photo to dark current ratio in the order of 4 × 103, which is 103 times higher than the TiO2 photodetector at 450 nm. In addition, this heterojunction based photodetector shows the responsivity and detectivity of 1415 mA W–1 and 4.97 × 1012Jones respectively. Moreover, In2O3 decorated TiO2 heterojunction shows highly repeatable results with a rise/fall time of 1.42/0.09 s. The fabricated photodetectors could have more potential in the field of broadband optical sensing.