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Electro-optical characteristics of 808 nm ridge-waveguide lasers operated with high-current nanosecond pulses

  • Published:2017-03-24 Issue:4 Volume:32 Page:045016
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Klehr A,Wünsche H J,Liero A,Prziwarka T,Erbert G,Wenzel H,Knigge A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors;Semiconductors;2023-03

2. The lateral leakage current restriction in the lateral direction of ridge diode lasers;Semiconductor Lasers and Applications XII;2022-12-27

3. Near-Field Dynamics of Ultra-Wide-Aperture (800 μm) Diode Lasers Under Nanosecond Pulse Excitation;IEEE Photonics Technology Letters;2021-01-01

4. Wavelength Stabilized 905 nm Diode Lasers in the 100 W Class for Automotive LiDAR;2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC);2019-06

5. Wavelength stabilized high pulse power laser diodes for automotive LIDAR;High-Power Diode Laser Technology XVI;2018-03-21
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