Novel Omega-Gate heterojunction tunneling FET with a new analytical model
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/abf665/pdf
Reference12 articles.
1. A novel tunnel FET design through adaptive bandgap engineering with constant sub-threshold slope over 5 decades of current and high ION IOFF ratio;Zhao;IEEE Electron Device Lett.,2017
2. Design and simulation of a novel graded-channel heterojunction tunnel FET with high ION IOFF ratio and steep swing;Zhu;IEEE Electron Device Lett.,2017
3. Design guideline for complementary heterostructure tunnel FETs with steep slope and improved output behavior;Wu;IEEE Electron Device Lett.,2016
4. Sub-thermionic scalable III–V tunnel field-effect transistors integrated on Si (100);Convertino,2019
5. Analysis of source doping effect in tunnel FETs with staggered bandgap;Min;IEEE Electron Device Lett.,2015
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