Study of effect of oxide thickness variation on electrical parameters and high frequency characteristics induced by work-function variation for delta-doped germanium-source vertical TFET-Reference-Cited by-同舟云学术

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Study of effect of oxide thickness variation on electrical parameters and high frequency characteristics induced by work-function variation for delta-doped germanium-source vertical TFET

Published:2020-09-05 Issue:10 Volume:35 Page:105009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Vanlalawmpuia K^ORCID,Saha Rajesh^ORCID,Bhowmick Brinda

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/aba823/pdf

Reference52 articles.

1. Low-subthreshold-swing tunnel transistors

2. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

3. Tunnel field-effect transistors as energy-efficient electronic switches

4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

5. Correction to "Revision of Tunneling Field-Effect Transistor in Standard CMOS Technologies"

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NCTFET Device for Low Power VLSI Application;2023 International Conference on Sustainable Computing and Smart Systems (ICSCSS);2023-06-14

2. Vertical GaN/InGaN/GaN heterostructure tunnel field-effect transistor: DC and analog/RF performance;International Journal of Modern Physics B;2022-12-03

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