High responsivity ZnO based p–n homojunction UV-photodetector with series Schottky barrier
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab7b0a/pdf
Reference25 articles.
1. Room-temperature gas sensing of ZnO-based gas sensor: A review
2. Understanding UV Sensor Performance in ZnO TFTs Through the Application of Multivariate Analysis
3. Realization of a high-Responsivity ultraviolet sensor base on ZnO nanowires modified by Au nanoparticles
4. Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction
5. Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
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4. Enhancing UV photodetection performance of an individual ZnO microwire p–n homojunction via interfacial engineering;Nanoscale;2023
5. Heterojunction structure for suppressing dark current toward high-performance ZnO microrod metal-semiconductor-metal ultraviolet photodetectors;Micro and Nanostructures;2022-11
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