Electron transport in the solar-relevant InAlAs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab16fd/pdf
Reference35 articles.
1. Simulation of Ultrasubmicrometer-Gate $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator
2. Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications
3. Design of high speed InGaAs/InP one-sided junction photodiodes with low junction capacitance
4. InA1As/InGaAs low-band-gap cell on InP for high efficiency multi-structure solar cell system
5. Wide-band-gap InAlAs solar cell for an alternative multijunction approach
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1. Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy;Journal of Luminescence;2022-09
2. Non-equilibrium longitudinal optical phonons and their lifetimes;Applied Physics Reviews;2021-06
3. Pulsed studies of intervalley transfer in Al0.35In0.65As : A paradigm for valley photovoltaics;Physical Review Materials;2020-08-27
4. Exploiting intervalley scattering to harness hot carriers in III–V solar cells;Nature Energy;2020-04
5. Carrier scattering;Semiconductors (2nd Edition);2019-11
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