Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices

Author:

Svejstrup WaldemarORCID,Maiani AndreaORCID,Van Hoogdalem Kevin,Flensberg KarstenORCID

Abstract

Abstract The route to reliable quantum nanoelectronic devices hinges on precise control of the electrostatic environment. For this reason, accurate methods for electrostatic simulations are essential in the design process. The most widespread methods for this purpose are the Thomas-Fermi (TF) approximation, which provides quick approximate results, and the Schrödinger-Poisson (SP) method, which better takes into account quantum mechanical effects. The mentioned methods suffer from relevant shortcomings: the TF method fails to take into account quantum confinement effects that are crucial in heterostructures, while the SP method suffers severe scalability problems. This paper outlines the application of an orbital-free approach inspired by density functional theory. By introducing gradient terms in the kinetic energy functional, our proposed method incorporates corrections to the electronic density due to quantum confinement while it preserves the scalability of a theory that can be expressed as a functional minimization problem. This method offers a new approach to addressing large-scale electrostatic simulations of quantum nanoelectronic devices.

Funder

Danmarks Frie Forskningsfond

Danmarks Grundforskningsfond

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Review of Material Modeling and Digitalization in Industry: Barriers and Perspectives;Integrating Materials and Manufacturing Innovation;2023-11-10

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