Abstract
Abstract
In this study, the impact of interfacial charges including fixed charges and acceptor-type traps between the dielectric and the channel in negative capacitance ferroelectric FETs (FeFETs) is investigated by simulation based on the Landau–Khalatnikov model. The results reveal the separate impact of the fixed charges and acceptor-type traps on device performance degradation, respectively, including the subthreshold swing (SS), switching current (I
on and I
off) and threshold voltage (V
T). On this basis, the combined impact of interfacial charges with the fixed charges and acceptor-type traps co-existing equally is further explored. Our findings indicate that the fixed charges play a key role in the V
T and I
off, while the acceptor-type traps predominate in the SS and I
on. This study helps to understand the degradation mechanism of FeFETs and extend the device end-of-lifetime.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials