Space charge effects on the bandwidth of Ge/Si avalanche photodetectors-Reference-Cited by-同舟云学术

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Space charge effects on the bandwidth of Ge/Si avalanche photodetectors

Published:2020-02-25 Issue:3 Volume:35 Page:035026
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zeng Q Y^ORCID,Pan Z X,Zeng Z H,Wang J T,Guo C,Gong Y F,Liu J C,Gong Z

Funder

the GDAS’ Project of Science and Technology Development

the Science and Technology Plan Project of Guangdong

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/ab7147/pdf

Reference23 articles.

1. Recent Advances in Avalanche Photodiodes

2. The distribution of gains in uniformly multiplying avalanche photodiodes: Theory

3. 25Gb/s normal incident Ge/Si avalanche photodiode

4. High performance planar germanium-on-silicon single-photon avalanche diode detectors

5. Germanium on Silicon Avalanche Photodiode

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector;Journal of Semiconductors;2024-07-01

2. Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz;Nature Photonics;2024-04-09

3. Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface;Physica Scripta;2024-03-29

4. Cryogenic Ge-on-Si avalanche photodiodes operating at 1550 nm wavelength;Optical Fiber Communication Conference (OFC) 2024;2024

5. Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers;Inorganics;2023-07-15

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