Photosensitive Schottky diodes based on nanostructured thin films of graphitized carbon formed on Cd1− x Zn x Te crystalline substrates

Abstract

Abstract Photosensitive Schottky diodes of graphite/n-Cd1−x Zn x Te were obtained by depositing thin films of graphitized carbon on crystalline substrates of n-Cd1−x Zn x Te solid solution by electron beam evaporation. Based on the analysis of the single-phonon Raman spectra, it was found that the obtained films can be considered as nanocrystalline carbon structures with crystallite sizes of La ≈ 4.8 nm. From the research on the temperature dependencies of the I–V-characteristics and frequency dependencies of the C–V-characteristics, the main parameters of the structure were determined as well as the role of surface energy states in the formation of the profile of energy zones in the contact area. The main mechanisms of the forward and reverse currents are established. Using the diffusion theory of rectification, the height of the potential barrier was calculated and found to coincide with the experimentally determined value. A model of the diode energy diagram is proposed, which accurately describes the experimental electrophysical phenomena. The photoelectric properties of the graphite/n-Cd1−x Zn x Te diodes were studied.