Sub-picosecond pulsed THz FET detector characterization in plasmonic detection regime based on autocorrelation technique-Reference-Cited by-同舟云学术

Sub-picosecond pulsed THz FET detector characterization in plasmonic detection regime based on autocorrelation technique

Published:2018-11-07 Issue:12 Volume:33 Page:124013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ikamas K,Lisauskas A^ORCID,Massabeau S,Bauer M,Burakevič M,Vyšniauskas J,Čibiraitė D^ORCID,Krozer V,Rämer A,Shevchenko S,Heinrich W,Tignon J,Dhillon S,Mangeney J,Roskos H G^ORCID

Funder

Lietuvos Mokslo Taryba

EU Horizon 2020 Marie Sklodowska-Curie ITN CELTA

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aae905/pdf

Reference48 articles.

1. THz Autocorrelators for ps Pulse Characterization Based on Schottky Diodes and Rectifying Field-Effect Transistors

2. Ultrafast graphene-based broadband THz detector

3. High-sensitivity wideband THz detectors based on GaN HEMTs with integrated bow-tie antennas

4. CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz

5. Nanowire-based field effect transistors for terahertz detection and imaging systems

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