MBE grown germanium tunnel-junctions—burstein-moss effect and band-edge luminescence in the Ge Zener-Emitter
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aa916f/pdf
Reference25 articles.
1. The Past, Present, and Future of Silicon Photonics
2. Micrometre-scale silicon electro-optic modulator
3. A proposed class of hetero-junction injection lasers
4. The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si
5. Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing;Journal of Applied Physics;2019-05-28
2. Strain and Band-Gap Engineering in Ge - Sn Alloys via P Doping;Physical Review Applied;2018-12-21
3. Engineering of Germanium Tunnel Junctions for Optical Applications;IEEE Photonics Journal;2018-04
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