Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aadfb5/pdf
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1. Theory of the MOS transistor in weak inversion-new method to determine the number of surface states
2. In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
3. On the 60 mV/dec @300 K limit for MOSFET subthreshold swing
4. Flexible semi-around gate silicon nanowire tunnel transistors with a sub-kT/q switch
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