Abstract
Abstract
Self-organized GaN nanorods with population densities ranging between 0.1 and 0.5 μm−2 and average heights in the range 1.7–16.5 µm, prepared by metal-organic chemical vapor deposition, were used as scattering centers for random lasing by incorporating Rhodamine 6G liquid dye solutions as the gain media. A lasing threshold as low as 11.3 J cm−2 was obtained from samples with nanorod density above 0.3 μm−2. The threshold depended on the nanorod density and diameter, but not the nanorod height. Lasing emission was observed at multiple angles, a clear indication of random lasing.
Funder
Australian National Fabrication Facility
Australian Research Council
Malaysia Ministry of Education
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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