Fabrication and characterization of sensitive vertical P-i-N germanium photodiodes as infrared detectors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab6bf7/pdf
Reference32 articles.
1. Model Development of p-i-n Germanium Devices for Infrared Detection
2. Analysis of dark current dependent upon threading dislocations in Ge/Si heterojunction photodetectors
3. Ultrahigh-sensitivity infrared detection system using an InGaAs p-i-n photodiode with low dielectric polarization noise
4. Mid-Infrared InAs Photodetector Grown on GaAs Substrate Through Cation Exchange
5. Flexible Thin-Film InGaAs Photodiode Focal Plane Array
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1. One-Dimensional Crystal-Structure Te–Se Alloy for Flexible Shortwave Infrared Photodetector and Imaging;Nano Letters;2024-05-06
2. P–i–n photodetector with active GePb layer grown by sputtering epitaxy;Applied Physics Express;2024-04-01
3. Design and optimization of a multidirectional photodetector in optoelectronic integration;Optics Letters;2024-02-12
4. Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region;Opto-Electronics Review;2024-01-03
5. Micro-transfer printed InGaAs photodetector on SOI platform;2023 IEEE Silicon Photonics Conference (SiPhotonics);2023-04
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