Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography

Abstract

Abstract The mean inner potential (MIP), V 0, for a series of Zn group VI semiconductor nanostructures were measured experimentally using off-axis electron holography. Values for ZnS, ZnTe and ZnO were remeasured and new values were added for ZnSe and ZnSSe nanowires. We confirm that the MIP increases non-linearly with mass density beginning at 12.4 ± 0.2 V for the lowest density ZnS and slowly increasing with composition to 12.9 ± 0.2 V for ZnSe, more rapidly for ZnTe and with a significant increase to 14.8 ± 0.3 V for ZnO with the highest density. Published results from DFT calculations compared well to these measurements with similar trends apparent for other cation families such as the Ga-III-V.