Design of film supported single mesa Schottky diodes for above 1THz application with submicron T-junction

Abstract

Abstract A high-performance terahertz Schottky barrier diode (SBD) with a film-supported single mesa structure featuring a low structural parasitic with extremely low dielectric loss is reported in this brief. The fabricated substrate-free SBD is supported with a 2–3 µm polymer film using a low parasitic coupling capacitor of about 0.12 fF. It significantly reduces the electromagnetic coupling effect between the anode and cathode pads by 90% compared with the traditional structure of the same size. To reduce the Schottky junction capacitance at the anode, a submicron T-junction process is used with a low junction capacitance of 0.15 fF. The cutoff frequency calculated by the total capacitance of the diode is up to 4 THz. The substrate-free terahertz monolithic integration circuit based on this film-supported single mesa SBD has better performance in reducing the circuit dielectric loss, exhibiting a remarkable potential for high-frequency applications.