Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures-Reference-Cited by-同舟云学术

Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

Published:2017-05-25 Issue:7 Volume:32 Page:075001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Li Zuo,Husain Muhammad Khaled,Yoshimoto Hiroyuki,Tani Kazuki,Sasago Yoshitaka,Hisamoto Digh,Fletcher Jonathan David,Kataoka Masaya,Tsuchiya Yoshishige,Saito Shinichi

Funder

European Union's Horizon 2020 research and innovation programme

EU FP7 Marie-Curie Carrier-Integration-Grant

EPSRC Manufacturing Fellowship

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aa6910/pdf

Reference45 articles.

1. ITRS 2.0: Toward a re-framing of the Semiconductor Technology Roadmap

2. Single-electron transistor as a radio-frequency mixer

3. The single-electron transistor

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