The effect of inserting thin Co2MnAl layer into the Co2MnSi/MgO interface on tunnel magnetoresistance effect
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/266/i=1/a=012104/pdf
Reference11 articles.
1. Search for Half-Metallic Compounds in Co2MnZ (Z=IIIb, IVb, Vb Element)
2. Huge Spin-Polarization of L21-Ordered Co2MnSi Epitaxial Heusler Alloy Film
3. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
4. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction
5. Coherent tunnelling conductance in magnetic tunnel junctions of half-metallic full Heusler alloys with MgO barriers
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1. Huge tunneling magnetoresistance in magnetic tunnel junction with Heusler alloy Co2MnSi electrodes;Chinese Journal of Chemical Physics;2021-06
2. Asymmetric magnetization reversal of the Heusler alloy Co2FeSi as free layer in an CoFeB/MgO/Co2FeSi magnetic tunnel junction;Applied Surface Science;2021-01
3. First-principles study on the structure, magnetism, and electronic properties in inverse Heusler alloy Ti2FeAl/GaAs(100) heterojunction;Superlattices and Microstructures;2019-09
4. Structure, Magnetism, and Electronic Properties of Inverse Heusler Alloy Ti2CoAl/MgO(100) Herterojuction: The Role of Interfaces;Applied Sciences;2018-11-22
5. Search for alternative magnetic tunnel junctions based on all-Heusler stacks;Physical Review B;2018-08-23
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