Application of plasma chemical treatment for manufacturing of instrument microstructures based on gallium nitride

Abstract

Abstract The epitaxial layers of n-n+-GaN were processed by plasma-chemical etching using a Sentech SI 500 unit equipped with an inductively coupled plasma source. The regimes of gallium nitride processing in chlorine plasma have been established, which make it possible to remove epitaxial layers of the semiconductor down to a depth of 10 μm with a smooth surface. Based on the obtained processing results, prototype samples of Schottky diode microstructures with quasi-vertical contact geometry were manufactured. The effect of pretreatment on the characteristics of instrument microstructures is demonstrated.