Vacuum-semiconductor hybrid photoelectric device for near IR-region

Abstract

Abstract Results of the development of a hybrid vacuum semiconductor photodetector for the near IR-range are presented. The device is based on InP/In0.53Ga0.47As/InP photocathode and electron-sensitive CCD matrix with the number of elements 768×580. In order for the minority charge carriers generated within 0.5 μm from the surface to reach the recording cells, the CCD matrix was thinned to about 30 μm. In addition, in the reverse side of the matrix the phosphorus impurity was implanted. This technique creates the necessary gradient of the electric field, which provides high efficient transport of minority charge carriers to the potential pits of the CCD matrix. At room temperature and continuous irradiation the measured threshold irradiance was registered at the level of 5·10−8 W/cm2 for the wavelength range λ = 1–1.5 μm.