Study on the Field-effect Carrier Transport of Epitaxial Graphene on SiC

Abstract

Abstract We have studied the field-effect carrier transport of graphene on 4H silicon carbide substrate. In order to extract the electrical parameters, the top-gated field effect transistor has been fabricated. By fitting the measured results with Kim’s model, the field effect carrier mobility (µ) and the metal/graphene contact resistance (Rc) and the residual carrier concentration (n0) are derived to be 3382cm2/Vs, 2250Ω▪µm and 2.18×1013cm-2, respectively. It is noted that the large contact resistance did not affect the high field effect carrier mobility of our device. The high carrier mobility suggests that the SiC epitaxial graphene may be quite suitable for the future high speed electronic applications.