Charging/discharging processes in nanocrystaline MOS structures - Theoretical study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/709/i=1/a=012012/pdf
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1. Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx;Solid-State Electronics;2019-09
2. Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers;Microelectronic Engineering;2017-06
3. Simulations of transient processes and characteristics of the nc-MOS structures;Microelectronic Engineering;2017-06
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