Analysis of Ferroelectric Thin Film BaZr0.6Ti0.4O3 with Annealing Temperature Increase Variations Using x-ray Diffraction

Abstract

Abstract Ferroelectric is a dielectric material which has spontaneous polarization and has the ability to change its internal polarization using a suitable electric field. The aim of this research is to decrease the FWHM value and increase the crystal size so that the dielectric constant increases for capacitor applications. Thin film ferroelectric material of Barium Zirconium Titanate (BZT) with the composition BaZr0.6Ti0.4O3 was prepared using the sol-gel method. The substrate used was FTO glass which has been treated etching and coated with BZT and in annealing at 800° C with annealing temperature increase of 5°C and 10°C. Samples were characterized using XRD with an angle interval of 2θ between 20° to 60°. The results of XRD characterization show that there were peaks indicating that there was a crystal structure. The resulting crystal structure was in a plane 100 at an angle of 2θ = 22.55°, a plane 110 at an angle of 2θ = 32.00°, a plane 111 at an angle of 2θ = 38.54°, and a plane 200 at an angle of 2θ = 47.64°. The resulting structure in this study was tetragonal where a = b = 3.955 and c = 4.266. The rate at which temperature rose had an effect on the peak of X-Ray diffraction. The FWHM value for 5°C was less than 10°C. This implies a greater density when annealing at 5°C. The crystal size values obtained with an increase in temperature of 5°C and 10°C in the 100 plane were 3.22 and 2.954, respectively. The crystal size was inversely proportional to the FWHM value where the small speed of the annealing temperature increase caused the crystal size to enlarge.