Prospects for applying FD-SOI technology to space applications

Abstract

Abstract In this work, using numerical simulation, the reasons for the occurrence of increased values of leakage currents in NMOS fully depleted SOI (FD-SOI) transistors during interaction with ionizing radiation. It has shown that the main reason for the formation of leakage currents is the charge accumulated in the latent oxide upon interaction with ionizing radiation. The effectiveness of applying a bias on the substrate and the formation of a well under the buried oxide (BOX) to reduce the leakage currents is investigated. Based on the obtained results, it was concluded that it is promising to use transistors made using FD-SOI technology for space applications.