Ultraviolet light-emitting diodes and photodiodes grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Ultraviolet light-emitting diodes and photodiodes grown by plasma-assisted molecular beam epitaxy

Published:2018-03 Issue: Volume:993 Page:012037
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Nechaev D V,Evropeytsev E A,Semenov A N,Troshkov S I,Egorkin V I,Zemlyakov V E,Rzheutski M V,Lutsenko E V,Toropov A A,Ivanov S V,Jmerik V N

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/993/i=1/a=012037/pdf

Reference15 articles.

1. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

2. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

3. Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

4. AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

5. AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates;Japanese Journal of Applied Physics;2021-06-16

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