Mid-infrared light absorption by photo-excited charge carriers in Ge/Si quantum dots
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/586/i=1/a=012001/pdf
Reference9 articles.
1. Sb mediated formation of Ge/Si quantum dots: Growth and properties
2. Electronic states inGe∕Siquantum dots with type-II band alignment initiated by space-charge spectroscopy
3. Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of luminescing Si/Ge-quantum dot structures
4. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix
5. Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy
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1. Progress in Light Emission from Silicon and Germanium Nanostructures;ECS Transactions;2018-04-05
2. Broadband mid-infrared pulses from potassium titanyl arsenate/zinc germanium phosphate optical parametric amplifier pumped by Tm, Ho-fiber-seeded Ho:YAG chirped-pulse amplifier;Optics Letters;2016-02-22
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