Research on high frequency reliability of silicon carbide MOSFETs resonant circuit

Abstract

Abstract Silicon carbide MOSFETs could process high power at high switching frequency with little loss. The driving circuit produce loss, which is proportional to the switching frequency. Resonant gate driving circuit, which has a inductor to produce resonant with a parasitic capacitor to recycle energy is used to reduce energy loss in the high frequency situation. Firstly, this paper introduces the simplest resonant gate driver. After that, three different types of resonant gate driver with their similar versions are introduced. In these optimized circuits, the third resonant gate driver (RGD3) is the simplest to control and has the lower energy loss, but the second resonant gate driver (RGD2) has faster switching speed and the first resonant gate driver (RGD1) provides more loops to energy feedback.