Analysis of basic performance parameters and temperature effect of SiC-MOSFET

Abstract

Abstract With the development of science and technology, traditional silicon-based semiconductor devices can no longer support the development of science and technology. As a new material, silicon carbide has many advantages. In this paper, the working principle of MOSFET is studied, and the characteristics of silicon carbide are sorted and analyzed, based on which the influence of temperature on the basic parameters of the MOSFET device is further studied. It is concluded that temperature affects the leakage current through the influence of threshold voltage drop and carrier: when the device operating voltage is high, the mobility determines the leakage current; at low operating voltage, the threshold voltage determines the leakage current. The research on temperature characteristics of SiC MOSFET is improved in this paper, which promotes the development of microelectronics technology.