Author:
Bazlov N. V.,Derbin A. V.,Drachnev I. S.,Gicharevich G. E.,Kotina I. M.,Konkov O. I.,Pilipenko N. V.,Chmel E. A.,Abolmasov S. N.,Terukov E. I.,Unzhakov E. V.
Abstract
Abstract
Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window thickness 3 – 4 orders of magnitude smaller than the lithium-side entrance window of standard Si(Li) detectors. The films of amorphous silicon were synthesized with MASD (magnetron assisted silane decomposition) method in mixture of SiH4 (25%) and Ar (75%) gases. Lithium layer surface resistivity and silicon target type (n- or p-) affection on electrical properties of Si(Li) detector contact produced were studied. The investigation performed had led to a technology of Si(Li) detector production with thickness of the entrance window on the diffusive lithium layer side below 0.1 µm.
Subject
General Physics and Astronomy
Cited by
4 articles.
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