Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/707/i=1/a=012013/pdf
Reference12 articles.
1. Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes
2. Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes
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1. Exploring the Temperature-Dependent Microelectrical Characteristics of Organic-Silicon Heterojunctions in the Absence of Luminance;ACS Applied Energy Materials;2024-05-28
2. The Electrical Characteristics and the Interface State Densities of Al/p-Si Structures with and Without the GO Insulator Layer;Current Chinese Science;2022-12
3. Ocaya–Yakuphanoğlu method for series resistance extraction and compensation of Schottky diode I–V characteristics;Measurement;2021-12
4. Superjunction MOSFET with a trench contact on partly relatively lightly doped P-pillar for excellent reverse recovery;Semiconductor Science and Technology;2021-08-31
5. Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode;Applied Physics A;2021-08-10
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